Hajime Fujikura

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 1:00 PM - 4:30 PM A301 (Main Hall)

Symposium (Oral)
| Symposium
| Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

2:10 PM - 2:40 PM

[6p-A301-4] HVPE growth of high-purity GaN epitaxial layers

〇Hajime Fujikura¹, Taichiro Konno¹, Takehiro Yoshida¹, Fumimasa Horikiri¹ (1.SCIOCS)