Junji Kotani

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 1:00 PM - 4:30 PM A301 (Main Hall)

Symposium (Oral)
| Symposium
| Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

[6p-A301-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ~Crystal Growth, Characterization and Application for Advanced GaN Electron Devices~

4:00 PM - 4:30 PM

[6p-A301-7] MOVPE growth of InAlN HEMT structures and suppression of gate leakage current
based on the control of internal electric field

〇Junji Kotani¹, Atsushi Yamada¹, Norikazu Nakamura¹ (1.Fujitsu Ltd.)