Ryoya Ota

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 1:45 PM - 5:45 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM

[6p-C17-5] Magnetoresistance of Dy-doped indium tin oxide thin films synthesized by sol-gel method.

〇Ryoya Ota¹, Masaharu Nishioka¹, Akira Fujimoto¹, Yukiyasu Kashiwagi², Masashi Saitoh², Masami Nakamoto², Yi-Kai Zhou³, Yoshiyuki Harada¹, Tomosumi Kamimura¹ (1.Osaka Inst of Tech., 2.ORIST, 3.Shanghai Normal Univ.)

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