Ryosuke Kanaya

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 12:15 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7a-C17-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:15 AM - 10:30 AM

[7a-C17-6] Fabrication of ZnO thin film by PLD using nonequilibrium oxygen-nitrogen plasma

〇Ryosuke Kanaya¹, Kiriya Daisuke¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)