Gosuke Yachida

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 12:30 PM C21 (C21)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

12:15 PM - 12:30 PM

[7a-C21-13] The dependence of regrowth rate of a thin amorphous Si layer formed on clean and H-terminated Si surfaces upon interfacial H amounts using medium energy IBIEC

〇Gosuke Yachida¹, Koudai Inoue¹, Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ.)