TaeEon Bae

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:30 AM - 11:30 AM PB3 (P)

Poster presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[7a-PB3-1~9] 13.5 Semiconductor devices and related technologies

9:30 AM - 11:30 AM

▲ [7a-PB3-3] Effects of gate electrode metal and drain doping concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs

〇(D)TaeEon Bae¹, Ryota Suzuki¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)