Kazutaka Kanegae

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 12:00 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

△ [7a-S22-5] Characterization of hole traps in n-type GaN homoepitaxial layers by optical isothermal capacitance transient spectroscopy considering thermal distribution of electrons at the edge of the depletion layer

〇Kazutaka Kanegae¹, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ)