Masahiro Horita

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:00 AM - 12:00 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7a-S22-1~11] 13.8 Compound and power electron devices and process technology

10:30 AM - 10:45 AM

[7a-S22-6] Annealing behavior of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita¹, Tetsuo Narita^2,3, Tetsu Kachi³, Tsutomu Uesugi², Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

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