Ryo Ikoma

→ Search for Ryo Ikoma in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:45 PM - 7:30 PM C11 (Office 1)

Oral presentation
| 17 Nanocarbon Technology
| 17.3 Layered materials

[7p-C11-1~21] 17.3 Layered materials

6:15 PM - 6:30 PM

[7p-C11-17] Heavily-doped SOI as a gate electrode for TMDC-FET by deterministic transfer method

〇(M2)Ryo Ikoma¹, Takamasa Kawanago¹ (1.Tokyo Tech.)