Shota Morimoto

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM

[7p-C17-5] ε-Ga₂O₃ epitaxial growth on GaN templates using gallium chloride precursor by mist chemical vapor deposition

〇(M1)Shota Morimoto¹, Daisuke Tahara¹, Nobutaka Miyauchi¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)