Toshiyuki Oishi

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

4:45 PM - 5:00 PM

[7p-S22-13] Study on effects of metal residual stress and gate shape for GaN HEMTs
by using device simulation

〇Toshiyuki Oishi¹, Yutaro Yamaguchi², Koji Yamanaka² (1.Saga university, 2.Mitsubishi Electric)