Katsumi Furuya

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

5:00 PM - 5:15 PM

[7p-S22-14] Frequency characteristics evaluation of EM-field generated by GaN-HEMT switching circuits

〇Katsumi Furuya¹, Toshihide Ide¹, Hiroshi Chonan¹, Ryosaku Kaji¹, Mitsuaki Shimizu¹, Masahiko Mori¹ (1.AIST)