Norifumi Takashima

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

△ [7p-S22-3] Contact resistivity of vertical trench GaN-MOSFET with Si-implanted source region

〇Norifumi Takashima¹, Masataka Sasada¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Univ. Fukui)