Takuma Nanjo

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

2:30 PM - 2:45 PM

[7p-S22-5] Effects of bias annealing in normally-off GaN MIS-HFET

〇Takuma Nanjo¹, Tetsuro Hayashida¹, Koyama Hidetoshi², Imai Akifumi¹, Furukawa Akihiko³, Watahiki Tatsuro¹, Yamamuka Mikio¹ (1.Mitsubishi Electric Corp. Advanced Technology R&D Center, 2.Mitsubishi Electric Corp. High Frequency & Optical Device Works, 3.Mitsubishi Electric Corp. Power Device Works)

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