Keisuke Uemura

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

3:00 PM - 3:15 PM

△ [7p-S22-7] Fabrication of recessed-gate AlGaN/GaN high-electron-mobility-transistors (HEMTs) utilizing photo-electrochemical (PEC) reactions

〇Keisuke Uemura¹, Taketomo Sato¹, Tamotsu Hashizume¹ (1.RCIQE, Hokkaido Univ.)