Takahiro Harie

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:30 AM - 10:45 AM

△ [8a-A411-6] Measurement of surface potential as afunction SiO₂film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO₂surface

〇Takahiro Harie^1,2, Kobayashi Daisuke², Yamamoto Tomoyuki¹, Hirose Kazuyuki^1,2 (1.Waseda Univ., 2.ISAS/JAXA)