9:30 AM - 9:45 AM [8a-C19-1] Low-Temperature Formation of n-Type Ge/Insulator by Film-Thickness-Modulated Sb-Induced Layer Exchange Crystallization 〇Hongmiao Gao1, Rikuta Aoki1, Masanobu Miyao1, Taizoh Sadoh1 (1.Kyushu Univ.)