Takuya Nakahara

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 1:15 PM - 4:30 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[8p-A301-1~12] 15.4 III-V-group nitride crystals

3:00 PM - 3:15 PM

△ [8p-A301-7] Mechanism of Stress Control for GaN Growth on Si using AlN Interlayers

〇Takuya Nakahara¹, Michihiro Suzuki¹, Momoko Deura¹, Takeshi Momose¹, Masakazu Sugiyama¹, Yoshiaki Nakano¹, Yukihiro Shimogaki¹ (1.Univ. of Tokyo)