Takashi Oinoue

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 1:15 PM - 4:00 PM A411 (411)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8p-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:45 PM - 3:00 PM

[8p-A411-6] Behavior analysis of Si etching process with the HF/HNO3 mixture by single spin wafer processor (3)

〇Takashi Oinoue¹, Suguru Saito², Atsushi Okuyama², Yoshiya Hagimoto², Hayato Iwamoto² (1.Sony Semiconductor Manufacturing, 2.Sony Semiconductor Solutions)

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