[5a-A301-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Ryota Ishii(Kyoto Univ.), Mark Holmes(The University of Tokyo)

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▲：英語発表
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9:00 AM - 9:15 AM

△ [5a-A301-1] Study on light emission mechanism in Eu-doped GaN by the initial signal analysis of time-resolved spectroscopy

〇(D)Tomohiro Inaba¹, Takanori Kojima¹, Jun Tatebayashi¹, Genki Yamashita², Eichi Matsubara^2,3, Masaaki Ashida², Yasufumi Fujiwara¹ (1.Osaka univ. Eng., 2.Osaka univ. Eng. Sci., 3.Osaka dent. univ.)

9:15 AM - 9:30 AM

[5a-A301-2] Analysis of emission characteristics of deep levels in p-type GaN

〇Ryo Shoji¹, Daisuke Uehara¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹, Kenji Shiojima² (1.Chiba Univ., 2.Fukui Univ.)

9:30 AM - 9:45 AM

[5a-A301-3] Characterization of surface properties of GaN single crystals by attenuated total reflectance

〇Kazunobu Kojima¹, Kenichi Akao², Miyuki Kanno², Kosuke Mizuno², Koushi Nagamori², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.JASCO Corp.)

9:45 AM - 10:00 AM

[5a-A301-4] Spatial inhomogeneity of internal quantum efficiency in GaN single crystals under photoexcitation

〇Kazunobu Kojima¹, Hidehiro Asai², Koichi Fukuda², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.AIST)

10:00 AM - 10:15 AM

▼ [5a-A301-5] Measurement of the Temporal Scale of the Spectral Diffusion of a GaN Interface Fluctuation Quantum Dot

〇(D)Kang Gao¹, Ivan Solovev³, Mark Holmes^1,2, Munetaka Arita^1,2, Yasuhiko Arakawa^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo, 3.Spin Optics Laboratory, SPbSU, Russia)

10:30 AM - 10:45 AM

[5a-A301-6] Characterization of Electrical Properties of InN Epilayer using THz Ellipsometry

〇Kenta Morino¹, Takashi Fujii^1,3, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP.)

10:45 AM - 11:00 AM

[5a-A301-7] Biexciton luminescence from InGaN ternary alloy epitaxial layers

Kyohei Umezawa¹, Eiji Kobayashi¹, Satoshi Kurai¹, Hideaki Murotani², 〇Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Tokuyama College)

11:00 AM - 11:15 AM

[5a-A301-8] Study on higher-energy bands in InGaN Quantum Well Structures by Scanning Near-Field Optical Microscopy (2)

〇Satoshi Kurai¹, Renma Mihara¹, Genki Nobata¹, Kohei Okawa¹, Ryoga Makio¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoshiki Yano², Toshiya Tabuchi², Koh Matsumoto², Yoichi Yamada¹ (1.Yamaguchi Univ., 2.TAIYO NIPPON SANSO)

11:15 AM - 11:30 AM

△ [5a-A301-9] Quantum-Wire-Like Density of States in c-plane AlGaN Quantum Wells in Polarization-Crossover Composition Region

〇Shigeta Sakai¹, Takuto Minami¹, Kazunobu Kojima², Shigefusa Chichibu², Atsushi Yamaguchi¹ (1.Kanazawa Inst. of Tech., 2.IMRAM-Tohoku Univ.)

11:30 AM - 11:45 AM

[5a-A301-10] Optical characterization of c-plane AlGaN multiple quantum wells with enhanced overlap integral of electron and hole wavefunctions by the quadratic compositional modulation

〇Kazunobu Kojima¹, Yusuke Hayashi², Hideto Miyake², Kazumasa Hiramatsu², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mie Univ.)

11:45 AM - 12:00 PM

[5a-A301-11] Temperature dependence of excitonic optical transitions in AlGaN-based quantum well structures

Yuya Hayakawa¹, 〇Hideaki Murotani², Hideto Miyake³, Kazumasa Hiramatsu³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.Mie Univ.)

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