[6p-A301-8~14] 15.4 III-V-group nitride crystals

Wed. Sep 6, 2017 4:45 PM - 6:30 PM A301 (Main Hall)

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4:45 PM - 5:00 PM

△ [6p-A301-8] In-depth microstrucutral analysis of an AlN thick film grown on a trench-patterned template using nanobeam X-ray diffraction

〇Kazuki Shida¹, Shotaro Takeuchi¹, Hideto Miyake^2,3, Kazumasa Hiramatsu³, Kazushi Sumitani⁴, Yasuhiko Imai⁴, Shigeru Kimura⁴, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Region. Innov., Mie Univ., 3.Grad. Sch. of Eng., Mie Univ., 4.JASRI)

5:00 PM - 5:15 PM

[6p-A301-9] Dislocation Observation and Strain Analysis in AlGaN/GaN Hetero-interface

〇Sachi Niki¹, Junko Maekawa¹, Masahiko Aoki¹, Yudai Yamamoto², Toshiya Yokogawa² (1.ITC, 2.Yamaguchi Univ.)

5:15 PM - 5:30 PM

△ [6p-A301-10] Characterization of GaN crystals with the X-ray topography

〇Yuko Kitano¹, Satoko Miyakawa¹, Mizuki Shoro¹, Koichi Akimoto¹ (1.Japan Women's Univ.)

5:30 PM - 5:45 PM

[6p-A301-11] Local leakage current analysis for dislocations in Na flux GaN single crystals

〇(M1)Takeaki Hamachi¹, Shotaro Takeuti¹, Masayuki Imanishi², Mamoru Imade², Yusuke Mori², Sakai Akira¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

5:45 PM - 6:00 PM

△ [6p-A301-12] Local piezoelectric analysis in Na flux GaN single crystals by piezo-response microscopy

〇(M1)Akira Ueda¹, Shotaro Takeuchi¹, Masayuki Imanishi², Mamoru Imade², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

6:00 PM - 6:15 PM

[6p-A301-13] Deposition of Gallium Nitride onto Oriented Metal Substrate by RF Sputtering and
Giant Increase of Piezoelectricity by Alloying

〇Masato Uehara^1,3, Takaaki Mizuno², Toshimi Nagase¹, Yasuhiro Aida², Hokuto Shigemoto³, Saki Tanaka³, Hiroshi Yamada^1,3, Morito Akiyama¹ (1.AIST, 2.Murata, 3.Kyusyu Univ.)

6:15 PM - 6:30 PM

[6p-A301-14] GaN Growth on Expanded Natural Graphite Sheet PERMA-FOIL^®

〇Takashi Inoue¹, Go Sajiki², Toshihiro Hosokawa¹, Tomoyuki Okuni¹, Hiroshi Okano² (1.Toyo Tanso Co., Ltd., 2.NIT, Kagawa College)

Session information

[6p-A301-8~14] 15.4 III-V-group nitride crystals

△ [6p-A301-8] In-depth microstrucutral analysis of an AlN thick film grown on a trench-patterned template using nanobeam X-ray diffraction

[6p-A301-9] Dislocation Observation and Strain Analysis in AlGaN/GaN Hetero-interface

△ [6p-A301-10] Characterization of GaN crystals with the X-ray topography

[6p-A301-11] Local leakage current analysis for dislocations in Na flux GaN single crystals

△ [6p-A301-12] Local piezoelectric analysis in Na flux GaN single crystals by piezo-response microscopy

[6p-A301-13] Deposition of Gallium Nitride onto Oriented Metal Substrate by RF Sputtering and
Giant Increase of Piezoelectricity by Alloying

[6p-A301-14] GaN Growth on Expanded Natural Graphite Sheet PERMA-FOIL^®

Authentication

Session information

[6p-A301-8~14] 15.4 III-V-group nitride crystals

△ [6p-A301-8] In-depth microstrucutral analysis of an AlN thick film grown on a trench-patterned template using nanobeam X-ray diffraction

[6p-A301-9] Dislocation Observation and Strain Analysis in AlGaN/GaN Hetero-interface

△ [6p-A301-10] Characterization of GaN crystals with the X-ray topography

[6p-A301-11] Local leakage current analysis for dislocations in Na flux GaN single crystals

△ [6p-A301-12] Local piezoelectric analysis in Na flux GaN single crystals by piezo-response microscopy

[6p-A301-13] Deposition of Gallium Nitride onto Oriented Metal Substrate by RF Sputtering andGiant Increase of Piezoelectricity by Alloying

[6p-A301-14] GaN Growth on Expanded Natural Graphite Sheet PERMA-FOIL®

Authentication

[6p-A301-13] Deposition of Gallium Nitride onto Oriented Metal Substrate by RF Sputtering and
Giant Increase of Piezoelectricity by Alloying

[6p-A301-14] GaN Growth on Expanded Natural Graphite Sheet PERMA-FOIL^®