Oral presentation

CS Code-sharing session » 【CS.6】3.13 & 3.15 Code-sharing session

[7a-A504-1~12] 【CS.6】3.13 & 3.15 Code-sharing session

Thu. Sep 7, 2017 9:00 AM - 12:15 PM A504 (504+505)

Nobuaki Hatori(PETRA), Hiromasa Shimizu(TUAT)

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▲：英語発表
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9:00 AM - 9:15 AM

[7a-A504-1] Taper-Tip Structure Dependences of Coupling Efficiency of Optical-mode Converter by Inserting Inter-layer between III-V/SOI Hybrid Device and Si Waveguide

〇Junichi Suzuki¹, Kumi Nagasaka¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo tech, 2.FIRST)

9:15 AM - 9:30 AM

▼ [7a-A504-2] Thermo-optic Tuning of Hybrid III-V/Si DFB laser by Direct Heating of Si waveguide for FMCW LiDAR Light Sources

〇(M1)Moataz Eissa¹, Junichi Suzuki¹, Nobuhiko Nishiyama^1,2, Toshihiko Baba³, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.IIR, 3.Yokohama Natl. Univ.)

9:30 AM - 9:45 AM

[7a-A504-3] Investigation of carrier-depletion InGaAsP optical modulator with L-shaped PN junction on III-V CMOS photonics platform

〇Naoki Sekine¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. Tokyo)

9:45 AM - 10:00 AM

[7a-A504-4] Multilevel Modulation with III-V/Si MOS Capacitor Mach-Zehnder Modulator

〇Tatsuro Hiraki^1,2, Takuma Aihara¹, Koichi Hasebe¹, Koji Takeda^1,2, Takuro Fujii^1,2, Tai Tsuchizawa^1,2, Takaaki Kakitsuka^1,2, Hiroshi Fukuda^1,2, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonics Center)

10:00 AM - 10:15 AM

[7a-A504-5] Evaluation of Reflection Tolerance of Quantum Dot DFB Lasers Integrated on Si Substrate

〇Nobuaki Hatori¹, Kenji Mizutani¹, Seok-hwan Jeong¹, Yu Tanaka¹, Kazuhiko Kurata¹ (1.PETRA)

10:15 AM - 10:30 AM

[7a-A504-6] Fabrication and Characterization of Hybrid Silicon Distributed Feedback Quantum Dot Laser

〇Bongyong Jang^1,2, Tai Tsuchizawa³, Hidetaka Nishi³, Takahiro Nakamura⁴, Jinkwan Kwoen², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS Univ.Tokyo, 2.NanoQuine Univ.Tokyo, 3.NTT Device Tech. Lab., 4.PETRA)

10:45 AM - 11:00 AM

[7a-A504-7] Low threshold current structure of GaInAsP laser on wafer bonded InP/Si substrate

〇Hirokazu Sugiyama¹, Naoki Kamada¹, Yuya Onuki¹, Han Xu¹, Kazuki Uchida¹, Gandhi Kallarasan Periyanayagam¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

11:00 AM - 11:15 AM

[7a-A504-8] Room temperature lasing of 1.5µm wavelength GaInAsP stripe laser diode on wafer bonded InP/Si substrate

〇Kazuki Uchida¹, Naoki Kamada¹, Yuya Onuki¹, Xu Han¹, Gandhi Kallarasan Periyanayagam¹, Hirokazu Sugiyama¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

11:15 AM - 11:30 AM

[7a-A504-9] NRZ and PAM-4 direct modulation of membrane distributed-reflector laser on Si substrate

〇Tatsuya Uryu¹, Nobuhiko Nishiyama^1,2, Takuo Hiratani^1,3, Daisuke Inoue¹, Tomohiro Amemiya^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.IIR, 3.sumitomo Ind.)

11:30 AM - 11:45 AM

△ [7a-A504-10] High Efficiency and High-speed Modulation Characteristics of Membrane Distributed-Reflector Laser on Si

〇Nagisa Nakamura¹, Takahiro Tomiyasu^1,2, Takuo Hiratani^1,3, Daisuke Inoue¹, Kai Fukuda¹, Tatsuya Uryu¹, Tomohiro Amemiya^1,4, Nobuhiko Nishiyama^1,4, Shigehisa Arai^1,4 (1.Tokyo Tech Eng., 2.Furukawa Electric, 3.Sumitomo Electric, 4.Tokyo Tech IIR)

11:45 AM - 12:00 PM

[7a-A504-11] Assessment of PL Characteristics of GaInAs/InP by Ar-FAB Irradiation for Surface Activated Bonding

〇Kumi Nagasaka¹, Junichi Suzuki¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2, Shigehisa Arai^1,2 (1.Tokyo Tech, 2.FIRST)

12:00 PM - 12:15 PM

[7a-A504-12] Membrane-based GaInAs/InP p-i-n photodiode fabricated on Si substrate

〇ZhiChen Gu¹, Tatsuya Uryu¹, Nagisa Nakamura¹, Daisuke Inoue¹, Tomohiro Amemiya¹, Nobuhiko Nishiyama¹, Shigehisa Arai¹ (1.Tokyo Tech.)

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