Oral presentation

[5p-S22-3~4] 8.8 Plasma Electronics English Session

Tue. Sep 5, 2017 2:30 PM - 3:00 PM S22 (Palace B)

Osamu Sakai(Univ. of Shiga Pref.)

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▲：英語発表
▼：奨励賞エントリーかつ英語発表
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2:30 PM - 2:45 PM

▲ [5p-S22-3] Evaluation of Nickel Self-Sputtering Yields by Molecular Dynamics Simulation

〇Nicolas Aini Mauchamp¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (1.Osaka University)

2:45 PM - 3:00 PM

▲ [5p-S22-4] Attempt of Liquid-Phase Material Processing Using Atmospheric-Pressure Glow Discharge Electrolysis

〇Fumiyoshi Tochikubo¹, Yuya Yamazaki¹, Takumi Hanawa¹, Naoshi Kitakaze¹, Naoki Shirai², Satoshi Uchida¹ (1.Tokyo Metropolitan Univ., 2.Hokkaido Univ.)

Poster presentation

[8a-PB5-1~3] 8.8 Plasma Electronics English Session

Fri. Sep 8, 2017 9:30 AM - 11:30 AM PB5 (P)

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▲：英語発表
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9:30 AM - 11:30 AM

▲ [8a-PB5-1] 2.45 GHz Microwave-induced Sheet Plasma Source

〇(DC)ArnoldRey Burgos Gines¹, Berverly Anne Suarez¹, Motoi Wada¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

▲ [8a-PB5-2] Measurement Electron Density of Atmospheric Pressure Plasma by Mach-Zehnder Interferometer using CO₂ and He-Ne Laser

〇Takafumi Yamada¹, Makoto Matsui¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

▼ [8a-PB5-3] Effects of gas pressure on the surface morphology of a-C:H films
deposited using Ar + H₂+ C₇H₈ plasma CVD

〇Taojun Fang¹, Kenji Yamaki¹, Kazunori Koga¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Naho Itagaki¹, Masaharu Shiratani¹ (1.Kyushu University)

Sessions

8 Plasma Electronics » 8.8 Plasma Electronics English Session

[5p-S22-3~4] 8.8 Plasma Electronics English Session

▲ [5p-S22-3] Evaluation of Nickel Self-Sputtering Yields by Molecular Dynamics Simulation

▲ [5p-S22-4] Attempt of Liquid-Phase Material Processing Using Atmospheric-Pressure Glow Discharge Electrolysis

[8a-PB5-1~3] 8.8 Plasma Electronics English Session

▲ [8a-PB5-1] 2.45 GHz Microwave-induced Sheet Plasma Source

▲ [8a-PB5-2] Measurement Electron Density of Atmospheric Pressure Plasma by Mach-Zehnder Interferometer using CO₂ and He-Ne Laser

▼ [8a-PB5-3] Effects of gas pressure on the surface morphology of a-C:H films
deposited using Ar + H₂+ C₇H₈ plasma CVD

Authentication

Sessions

8 Plasma Electronics » 8.8 Plasma Electronics English Session

[5p-S22-3~4] 8.8 Plasma Electronics English Session

▲ [5p-S22-3] Evaluation of Nickel Self-Sputtering Yields by Molecular Dynamics Simulation

▲ [5p-S22-4] Attempt of Liquid-Phase Material Processing Using Atmospheric-Pressure Glow Discharge Electrolysis

[8a-PB5-1~3] 8.8 Plasma Electronics English Session

▲ [8a-PB5-1] 2.45 GHz Microwave-induced Sheet Plasma Source

▲ [8a-PB5-2] Measurement Electron Density of Atmospheric Pressure Plasma by Mach-Zehnder Interferometer using CO2 and He-Ne Laser

▼ [8a-PB5-3] Effects of gas pressure on the surface morphology of a-C:H filmsdeposited using Ar + H2+ C7H8 plasma CVD

Authentication

▲ [8a-PB5-2] Measurement Electron Density of Atmospheric Pressure Plasma by Mach-Zehnder Interferometer using CO₂ and He-Ne Laser

▼ [8a-PB5-3] Effects of gas pressure on the surface morphology of a-C:H films
deposited using Ar + H₂+ C₇H₈ plasma CVD