[5a-A301-1~11] 15.4 III-V-group nitride crystals

[5a-A301-6] Characterization of Electrical Properties of InN Epilayer using THz Ellipsometry

〇Kenta Morino¹, Takashi Fujii^1,3, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹, Takeshi Nagashima², Toshiyuki Iwamoto³, Yukinori Sato³ (1.Ritsumeikan Univ., 2.Setsunan Univ., 3.PNP.)

Keywords:THz Time-Domain Spectroscopy ellipsometry, InN, Hall effect measurement

We measured characterization of electrical properties of InN epilayer grown on GaN template using THz-TDSE. From the result of the ECV measurement, it was found that the surface electron accumulation layer was present, and optical analysis was performed assuming that the surface layer had electrical properties different from that inside the thin layer. The mobility inside the InN thin layer shows a larger value than the mobility obtained by the Hall effect measurement, and it is considered that reducing the influence by the surface electron accumulation is effective for improving the electric characteristics.