10:30 AM - 10:45 AM
▼ [5a-C11-7] Study on physical origins of slow traps for electrons and holes in ALD Al2O3/GeOx/Ge interfaces
Keywords:Ge, slow trap density
Oral presentation
13 Semiconductors » 13.3 Insulator technology
Tue. Sep 5, 2017 9:00 AM - 12:00 PM C11 (Office 1)
Masato Koyama(TOSHIBA), Akio Ohta(Nagoya Univ.)
10:30 AM - 10:45 AM
Keywords:Ge, slow trap density