[5a-C11-1~11] 13.3 絶縁膜技術

▼ [5a-C11-7] Study on physical origins of slow traps for electrons and holes in ALD Al₂O₃/GeO_x/Ge interfaces

〇Mengnan Ke¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Tokyo Univ.)

キーワード：Ge, slow trap density