[5a-C17-1~10] 13.8 Compound and power electron devices and process technology

△ [5a-C17-10] Evaluation of Switching and Thermal Characteristics of α-Ga₂O₃ Schottky Barrier Diode

〇Katsuaki Kawara¹, Masaya Oda¹, Rie Tokuda¹, Hitoshi Kambara¹, Takafumi Okuda², Toshimi Hitora¹ (1.FLOSFIA Inc., 2.Graduate School of Engineering, Kyoto Univ.)

Keywords:gallium oxide, power device, Schottky barrier diode

Schottky barrier diodes (SBDs) were fabricated as TO220 packaged products by using α-gallium oxide (α-Ga₂O₃), which is attracting attention as a semiconductor material, and the switching characteristics and thermal characteristics of the α-Ga₂O₃ SBD were measured for the first time. The reverse recovery time of the α-Ga₂O₃ SBD was shorter than that of SiC SBD and Si PN diode. Also, the thermal resistance was 13.9^oC/W, which was comparable to that of SiC SBD (12.5 ^oC/W). This study shows that switching characteristics and thermal characteristics of the α-Ga₂O₃ were comparable to those of commercial products, indicating the future potential of α-Ga₂O₃ as a semiconductor material for power devices.