[5a-C18-1~12] 10.1 新物質・新機能創成（作製・評価技術）

▲ [5a-C18-6] Magnetic properties of perpendicularly magnetized Mn₄N thin films deposited on MgO and STO substrates, for current-induced domain-wall motion devices

〇Toshiki Gushi¹、Laurent Vila²、Jean-Philippe Attane²、Olivier Fruchart²、Alain Marty²、Stefania Pizzini³、Fumiya Takata¹、Akihito Anzai¹、Takashi Suemasu¹ (1.Univ. of Tsukuba、2.SPINTEC、3.Institut Neel)

キーワード：Ferromagnetic nitrides, Mn4N, Domain wall motion

We are interested in Mn₄N film with small M_S and large K_u for application to current-induced DW motion devices. In this study, Mn4N films are grown by MBE on MgO(001) and STO(001) substrate. We performed Magneto-transport and magnetic configuration measurement to evaluate the domain wall properties. As a result, we obtained much sharper magnetization switching for Mn4N on STO than that on MgO, in well-squared hysteresis loop. In addition, Mn4N film grown on STO has mm-sized domains, larger than on MgO, sub-μm domains. These results indicate Mn4N/STO system has few intrinsic DW pinning sites. Therefore Mn4N/STO layer has a great potential for current-induced DW motion.