11:00 AM - 11:15 AM
[5a-C21-8] Structural analysis of InxGa1-xAs/InAs/GaAs(111)A grown by ATLAS method
Keywords:InGaAs, Metamorphic, X ray diffruction
We have proposed ATLAS method for the formation of high quality metamorphic InGaAs on GaAs(111)A substrates, in which atomically thin InAs layer counteracts the lattice-mismatch between InGaAs and GaAs. In this presentation, we report on the structural properties of the metamorphic InGaAs with high In contents grown by the ATLAS method.