[5a-C21-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5a-C21-8] Structural analysis of In_xGa_1-xAs/InAs/GaAs(111)A grown by ATLAS method

〇Takaaki Mano¹, Akihiro Ohtake¹, Yoshiki Sakuma¹ (1.NIMS)

Keywords:InGaAs, Metamorphic, X ray diffruction

We have proposed ATLAS method for the formation of high quality metamorphic InGaAs on GaAs(111)A substrates, in which atomically thin InAs layer counteracts the lattice-mismatch between InGaAs and GaAs. In this presentation, we report on the structural properties of the metamorphic InGaAs with high In contents grown by the ATLAS method.