[5p-A202-1~18] 6.3 Oxide electronics

△ [5p-A202-12] Study on the effect of Hf oxide film sputtering condition
on resistive random access memory properties

〇(M1)Atsushi Azuma¹, Ryo Nakajima¹, Hayato Yoshida¹, Tomohiro Shimizu¹, Takeshi Ito¹, Syouso Shingubara¹ (1.Kansai Univ.)

Keywords:resistive random access memory