[5p-A202-1~18] 6.3 Oxide electronics

△ [5p-A202-14] Investigations on Oxygen-Scavenging Effects of
Interfacial Metal Layers in Metal/Oxide Junctions

〇Ryosuke Nakagawa¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

Keywords:metal/Oxide junctions, resitive swithing memory, scavenging layer