The 78th JSAP Autumn Meeting, 2017

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[5p-A202-1~18] 6.3 Oxide electronics

Tue. Sep 5, 2017 1:15 PM - 6:00 PM A202 (202)

Hisashi Shima(AIST), Yusuke Nishi(Kyoto Univ.)

2:45 PM - 3:00 PM

[5p-A202-7] Elucidating Resistive Switching Mechanism of Resistive Random Access Memory by Utilising the Effect of Solvent Supply

〇(M1)Sohta Hida1, Takahiro Yamasaki2, Takahisa Ohno2, Atsushi Shimizu3, Satoru Kishida1,4, Kentaro Kinoshita3 (1.Tottori Univ., 2.NIMS, 3.Tokyo Univ. of Science, 4.TiFREC)

Keywords:ReRAM, Grain boundaries, NiO