Achievement of high-EQE(9%) AlGaN deep-UV LED by optimizing thickness of Ni in highly reflective Ni/Al electrode

Noritoshi Maeda; Masafumi Jo; Yukio Kashima; Eriko Matsuura; Hideki Takagi; Takeshi Iwai; Toshiro Morita; Mitsunori Kokubo; Takaharu Tashiro; Ryuichiro Kamimura; Yamato Osada; Hideki Hirayama

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5p-A301-1~19] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TOYODA GOSEI)

5:45 PM - 6:00 PM

[5p-A301-16] Achievement of high-EQE(9%) AlGaN deep-UV LED by optimizing thickness of Ni in highly reflective Ni/Al electrode

〇Noritoshi Maeda¹, Masafumi Jo¹, Yukio Kashima^1,2, Eriko Matsuura^1,2, Hideki Takagi³, Takeshi Iwai⁴, Toshiro Morita⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Ryuichiro Kamimura⁶, Yamato Osada⁶, Hideki Hirayama¹ (1.RIKEN, 2.Marubun, 3.AIST, 4.ToKyo Ohka Kogyo, 5.Toshiba Machine, 6.ULVAC)

Keywords:DUV AlGaN LED