[5p-A301-1~19] 15.4 III-V-group nitride crystals

[5p-A301-17] Achievement of high-EQE(10%)AlGaN deep-UV LED using highly-reflective PhC

〇Yukio Kashima^1,2, Noritoshi Maeda¹, Eriko Matsuura^1,2, Masafumi Jo¹, Takeshi Iwai³, Toshiro Morita³, Mitsunori Kokubo⁴, Takaharu Tashiro⁴, Ryuichiro Kamimura⁵, Yamato Osada⁵, Hideki Takagi⁶, Hideki Hirayama¹ (1.RIKEN, 2.Marubun, 3.Tokyo Ohka, 4.Toshiba Machine, 5.ULVAC, 6.AIST)

Keywords:Highly-reflective photonic crystal, Light extraction efficiency, AlGaN deep-UV LED

Highly-reflective photonic crystal(HR-PhC) was fabricated on transparent p-AlGaN contact layer of DUV-LEDs by nano-imprinting and damageless ICP dry-etching technology.Electrode was fabricated by tilting evaporation method.By introducing HR-PhC in case evaporating highly-reflective(75%) Ni/Mg electrode external quantum efficiency(EQE) was was increased from 7.5% to 10%.