The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5p-A301-1~19] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TOYODA GOSEI)

6:15 PM - 6:30 PM

[5p-A301-18] Damage-less fine control fabrication of highly-reflective PhC for AlGaN deep-UV LED

Yukio Kashima1,2, Takaharu Tashiro3, Mitsunori Kokubo3, Ryuichiro Kamimura4, Yamato Osada4, Takeshi Iwai5, Toshiro Morita5, Eriko Matsuura1,2, Noritoshi Maeda1, Masafumi Jo1, Hideki Takagi6, Hideki Hirayama1 (1.RIKEN, 2.Marubun, 3.Toshiba Machine, 4.ULVAC, 5.Tokyo Ohka, 6.AIST)

Keywords:Highly-reflective photonic crystal, Process integration of nano-imprinting and ICP dry-etching, Bi-layer resist

In order to optimize an effect of highly-reflective photonic crystal a fine control fabrication of PhC pattern's profile (diameter,period,depth) and precise positioning are necessary.The process integration of nano-imprint patterning of bi-layer resist to a hole wafer and damage-less ICP dry-etching has been performed precisely within 10nm precision in this research.