[5p-A301-1~19] 15.4 III-V-group nitride crystals

△ [5p-A301-2] Low resistive GaN tunnel junctions grown by MOVPE

〇(M1)Ryota Fuwa¹, Yasuto Akatsuka¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac. Sci.and Eng., Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Keywords:GaN, tunnel junction

GaN-based tunnel junctions have been developed to leverage their reverse-biased ohmic characteristics for hole injections in light emitting devices. In this study, effects of regrowth and intentional oxidations at GaN TJ interfaces grown by MOVPE were investigated towards low resistance. And MOVPE-grown GaN tunnel junctions show comparable characteristics to the conventional p-contact blue LED.