[5p-A411-1~13] 15.2 II-VI and related compounds

[5p-A411-10] Effect of hydrogen partial pressure in carrier gas in processes for preparation of Cu-Zn-Sn precursor and for selenization on crystal structure and composition of Cu₂ZnSnSe₄ films

〇masato hirose¹, Masahiro Tahashi¹, Makoto Takahashi¹, Kenji Yoshino², Hideo Goto¹ (1.Chubu Univ., 2.Univ. of Miyazaki)

Keywords:Cu2ZnSnSe4, Hydrogen partial pressure, Spin-corting method