[5p-A502-1~13] 9.5 New functional materials and new phenomena

[5p-A502-9] Evaluation of a Topological Insulator and Device Fabrication for the Quantum Hall Effect

〇Tetsuro Misawa^1,2, Yasuhiro Fukuyama², Shuji Nakamura², Yuma Okazaki², Nariaki Nasaka¹, Takao Sasagawa¹, Chiharu Urano², Nobu-Hisa Kaneko² (1.MSL/Tokyo Tech, 2.NMIJ/AIST)

Keywords:topological insulator, quantum Hall effect, gate control

We aim at the measurement of the quantum Hall effect in the topological insulator and carry out a universality test of the effect. A candidate material, Sn_0.02Bi_1.08Sb_0.9Te₂S (Sn-BSTS) is synthesized and creaved into single crystals and their transport properties are measured. By the scoch tape method, the material is exfoliated into thin films and put on SiO₂/Si substrates. Electrode metals are deposited on the material, which we used as the measurement device. We will present about carrier control by gate control via the ionic liquid at 220 K. The quantum Hall effect is yet to be realized. We will discuss magnetic transport of those devices.