The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Tue. Sep 5, 2017 1:45 PM - 4:30 PM C11 (Office 1)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

3:15 PM - 3:30 PM

[5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTixMg1-xO3-δ Catalyst

〇(D)HsiangFang Sun1, Akihiro Ikeda1, Tanemasa Asano1 (1.Kyushu Univ.)

Keywords:catalyst, oxidation

Following our successful results on low temperature oxidation of 4H-SiC, this work investigates oxidation characteristic of catalytic thermal oxidation using the perovskite oxide, SrTixMg1-xO3-δ, as catalyst. Si is used as oxidation target and is set beside the catalyst in a furnace tube. Enhanced oxidation is clearly observed in the temperature range 650-850oC. The diffusion length of oxygen atoms generated by the catalyst is found to be tens of mm.