2017年第78回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.3 絶縁膜技術

[5p-C11-1~10] 13.3 絶縁膜技術

6.1と13.3と13.5のコードシェアセッションあり

2017年9月5日(火) 13:45 〜 16:30 C11 (事務室1)

井上 真雄(ルネサス)、渡邉 孝信(早大)

15:15 〜 15:30

[5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTixMg1-xO3-δ Catalyst

〇(D)HsiangFang Sun1、Akihiro Ikeda1、Tanemasa Asano1 (1.Kyushu Univ.)

キーワード:catalyst, oxidation

Following our successful results on low temperature oxidation of 4H-SiC, this work investigates oxidation characteristic of catalytic thermal oxidation using the perovskite oxide, SrTixMg1-xO3-δ, as catalyst. Si is used as oxidation target and is set beside the catalyst in a furnace tube. Enhanced oxidation is clearly observed in the temperature range 650-850oC. The diffusion length of oxygen atoms generated by the catalyst is found to be tens of mm.