[5p-C18-8~21] 【CS.10】10.1 新物質・新機能創成（作製・評価技術）,10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術のコードシェアセッション

▼ [5p-C18-12] Electric field effect on magnetic anisotropy in Co/Pt/oxide system

〇Takamasa Hirai¹、Ryuhei Kohno¹、Yuki Hibino¹、Tomohiro Koyama¹、Daichi Chiba¹ (1.The Univ. of Tokyo)

キーワード：electric field effect, magnetic anisotropy

Control of magnetic anisotropy (MA) by gate electric field (E_G) has a great deal of attention in terms of ultralow power information writing method in magnetic random access memory. In 3d-ferromagnetic metal/oxide systems, which has been mainly investigated, the efficiency of MA modulation by E_G is 1-2 orders smaller than the values required for the application. Recently, our group has reported that in the sample with inserting a few monolayer Pd between the Co and MgO layers the electric field modulation of MA using an ionic liquid gating is largely enhanced at low temperature. The proximity-induced magnetic moment in the Pd layer is considered to be relevant to that. Here, we investigated the electric field effect in Co/Pt/oxide system, where the induced moment exists in the Pt layer, using a solid state gating.