The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 1:45 PM - 5:15 PM C21 (C21)

Manabu Mitsuhara(NTT), Kouichi Akahane(NICT)

1:45 PM - 2:00 PM

[5p-C21-1] Influence of Nitrogen Atomic Arrangement in Dilute Nitrides on Band Gap Energy

〇(M2)Kazuki Miyajima1, Shuhei Yagi1, Yasushi Shoji2, Yoshitaka Okada2, Hiroyuki Yaguchi1 (1.Saitama Univ., 2.RCAST, The Univ. of Tokyo.)

Keywords:GaAsN, MBE, Dilute Nitrides