[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-2] Segregation of Bi atoms during MBE growth of GaAs/GaAsBi quantum wells

〇(M1)Akira Tsukamoto¹, Eigo Ito¹, Koichiro Higaki¹, Saburo Tanaka¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

Keywords:semiconductor, GaAsBi, segregation

MBE grown GaAs / GaAs Bi quantum wells were examined by STEM and EDS, and the profile of the Bi composition was analyzed.