[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-3] Temperature Characteristics of GaAsBi/GaAs MQW LED grown by two-substrate-temperatures technique

〇Toui Higuchi¹, Taishi Sasaki¹, Akira Tsukamoto¹, Eigo Ito¹, Kohki Yamada¹, Pallavi Patil¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

Keywords:GaAsBi, LED, Temperature Characteristics

Temperature characteristics of LED (light emitting diodes) having GaAsBi / GaAs multiple quantum well (MQW) fabricated by two temperature growth method as the active layer were measured. The peak of electron luminescence was observed at 1200 nm at 260 K and at 1177 nm at 170 K. The peak emission wavelength gradually shifted to the short wavelength side and its temperature coefficient was 0.26 nm / K. The full width at half maximum of the emission spectrum was about 100 nm almost independent of temperature.