The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[5p-C21-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 5, 2017 1:45 PM - 5:15 PM C21 (C21)

Manabu Mitsuhara(NTT), Kouichi Akahane(NICT)

3:30 PM - 3:45 PM

[5p-C21-7] MBE growth of strained InGaAs/InAlAs quantum well structure on (111)InP

〇Yuichi Kawamura1, Azusa Taniguchi1 (1.Osaka Pref.Univ.)

Keywords:compound semiconductor, quantum well structure

InGaAs/InAlAs quantum well structures are very important for semiconductor lasers for optical fiber communication and mid -infrared quantum cascade lasers for sensing. In this study, strained InGaAs/InAlAs quantum well structures are grown on (111)B InP substrates and are compeared to those grown on (100) InP substrates.