[5p-PA1-1~82] 17 Nanocarbon Technology（Poster）

[5p-PA1-63] Single Layer Etching of WSe₂ using Inward-Plasma

〇Jun Miyawaki¹, Toshitaka Kubo¹, Tetsuo Shimizu¹, Shun'ichiro Shimbori², Satoshi Takahashi², Kazuhiro Endo³, Atsushi Ando¹ (1.AIST, 2.Sanyu CO., Ltd., 3.Kanazawa Inst. Tech.)

Keywords:2D layered materials, inward plasma, etching

Etching of tungsten diselenide (WSe₂) was conducted using inward-plasma etching. A hole with a diameter of ~600 micro meter and depth of ~18 micro meter was fabricated. The surface roughness at the bottom of the fabricated hole was ~1nm within a region of 500x500nm², thus nearly single layer etching was achieved.