[5p-PB1-1~13] 3.13 半導体光デバイス

▲ [5p-PB1-10] Modeling of Current Gain Compression in Tin-Incorporated Group-IV Alloy Based Transistor Laser

〇(D)Ravi Ranjan¹、Prakash Pareek¹、Mukul Das¹ (1.Indian Institute of Technology (ISM) Dhanbad)

キーワード：Transistor Laser, GeSn, Quantum Well

In this article, the modeling of current gain compression of SiGeSn/GeSn alloy based Transistor Laser (TL) is addressed to understand the current gain characteristic of group IV TL. the collector current density (J_C) as a function of collector-emitter voltage (V_CE) for different injected base current density (J_B) in common-emitter (CE) mode to show the current gain compression.