[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-3] Theoretical study for wet oxidation reaction mechanisms at 4H-SiC/SiO₂ interfaces

〇Shinsuke Hori¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

Keywords:wet oxidation, first principles calculation, 4H-SiC/SiO2 interfaces