[5p-PB8-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[5p-PB8-4] First Principle Study on Temperature Dependence of Defect Termination at SiC/SiO₂ Interface

〇Kenta Chokawa¹, Araidai Masaaki^1,2, Kenji Shiraishi^1,2 (1.Nagoya Univ., 2.IMAsSS, Nagoya Univ.)

Keywords:SiC, First principles study, post oxidation annealing